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AlGaAs / InGaAs HEMT
CFY 77
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Datasheet
Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CFY77-08 CFY77-10
HG HH
Q62702-F1549 Q62702-F1559
MW-4 MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51C) 2) Thermal resistance Channel-soldering point source
1) Dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point
Symbol
Unit 3.5 4.5 -3.0 60 150 -65...+150 180 V V V mA C C mW
VDS VDG VGS ID TCh Tstg Ptot
RthChS
550
K/W
Siemens Aktiengesellschaft
pg. 1/4
11.01.1996 HL EH PD 21
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Electrical characteristics at TA = 25C unless otherwise specified
Characteristics Drain-source saturation current
VDS = 2 V VDS = 2 V VDS = 2 V VDS = 2 V VGS = 0 V ID = 1 mA ID = 15 mA ID = 15 mA ID = 15 mA f = 12 GHz
Symbol
min 15 -2 50
typ 30 -0.7 0.05 65
max 60 -0.2 2 -
Unit mA V A mS dB
IDSS VGS(P) IG gm F
Pinch-off voltage Gate leakage current Transconductance Noise figure
VDS = 2 V
CFY77-08 CFY77-10 Associated gain
VDS = 2 V ID = 15 mA f = 12 GHz
-
0.7 0.9
0.8 1 dB
Ga
10 9.5 10.5 10 -
CFY77-08 CFY77-10
Siemens Aktiengesellschaft
pg. 2/4
11.01.1996 HL EH PD 21
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Total Power Dissipation Ptot = f (TS;TA)
Package mounted on alumina
200 180 [ mW ] 160 140 120 100 80 60 40 20 0 0 50 100 150 TA ; TS [ C ] TA TS
P
tot
Typical Common Source Noise Parameters
ID = 15 mA f GHz 2 4 6 8 10 12 14 Fmin dB 0.36 0.44 0.51 0.58 0.65 0.72 0.80 Ga dB 19.4 15.9 13.9 12.4 11.2 10.4 9.7 opt MAG 0.79 0.72 0.63 0.56 0.52 0.54 0.59 ANG 27 60 92 134 180 -135 -108 UDS = 2.0 V Rn 13.7 10.1 5.85 2.35 1.1 2.9 7.15 Z0 = 50 rn 0.274 0.202 0.117 0.047 0.022 0.058 0.143 N 0.03 0.04 0.05 0.06 0.07 0.08 0.10 F50 dB 1.2 1.1 1.05 1.0 1.0 1.1 1.5
Siemens Aktiengesellschaft
pg. 3/4
11.01.1996 HL EH PD 21
AlGaAs / InGaAs HEMT
Typical Common Source S-Parameters
ID = 15 mA UD = 2.0 V Z0 = 50
CFY 77
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GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Mag 0.98 0.94 0.88 0.82 0.77 0.72 0.66 0.63 0.62 0.62 0.64 0.64 0.66 0.67 0.69 0.73 0.76 0.78 0.77
S11 Ang -22.8 -46.1 -68.4 -90.6 -110.8 -131.4 -153.6 -175.2 164.4 145.0 128.3 113.1 101.3 89.4 73.6 59.2 51.7 45.4 36.2
Mag 5.55 5.40 5.09 4.77 4.45 4.16 3.88 3.58 3.29 3.01 2.76 2.51 2.32 2.18 2.06 1.85 1.65 1.56 1.51
S21 Ang 159.6 139.3 120.1 101.2 84.0 67.3 50.2 34.5 18.9 4.0 -10.3 -23.5 -35.7 -48.2 -62.4 -75.9 -86.5 -96.7 -108.6
Mag 0.030 0.053 0.074 0.089 0.101 0.112 0.119 0.122 0.120 0.119 0.119 0.114 0.114 0.116 0.116 0.115 0.112 0.115 0.121
S12 Ang 87.5 57.8 44.9 30.7 18.1 7.9 -3.3 -12.7 -22.0 -29.5 -37.4 -44.0 -47.3 -53.1 -58.6 -65.8 -69.4 -72.3 -76.7
Mag 0.633 0.60 0.54 0.48 0.42 0.35 0.28 0.22 0.16 0.14 0.15 0.18 0.23 0.25 0.28 0.36 0.39 0.42 0.44
S22 Ang -16.3 -32.5 -48.0 -63.3 -77.5 -92.6 -110.8 -132.0 -157.3 177.3 136.2 115.4 100.9 91.0 75.4 57.1 53.1 43.8 38.8
Siemens Aktiengesellschaft
pg. 4/4
11.01.1996 HL EH PD 21

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